LMGP - rubrique recherche - Cristallogénèse

Crystal Growth

A research team dedicated to the physical chemistry of materials under high temperatures. We are mainly addressing carbides and nitrides, with a special focus on their crystal growth. The team benefits from a multidisciplinary approach, coupling advantageously experiments, characterization and modelling.

We are addressing:
Basic academic works :
  • study of basic mechanisms (nucleation, growth, doping, surface instabilities …),
  • exploring new compounds (new Wide Bandgap semiconductors, MAX phases, new objects),
  • exploring new crystal growth process concepts and modelling
Application driven works:
  • P-type 4H-SiC substrates for high power thyristors (collaboration Ampère Lab. INSA Lyon),
  • 3C-SiC photoelectrodes for water splitting (collaboration TU Darmstadt)

Team (Permanent Staff)


Contact:
D. Chaussende (Leader)

O. Chaix
J.M. Dedulle
R. Madar
T. Ouisse
E. Pernot
E. Sarigiannidou

Technical support

J. La Manna
L. Parent-Bert

Investigations are conducted following four lines :

Solution growth of SiC

OBJECTIVES
Demonstration of top seeded solution growth as an alternative route to PVT for the growth of SiC bulk single crystals.

Vapour phase growth of SiC

OBJECTIVES
  To bring new insights to the well established vapour phase growth processes of SiC. 

MAX phases


OBJECTIVES
Exploration of this large family compounds, from the crystal growth point of view to fundamental physical properties investigation...

Defects and microstructure in wide bandgap semiconductors

OBJECTIVES
Birefringence patterns of a dislocation in 6H-SiC. A better understanding of extended defects, microstructures, polytypic transitions and properties in wide band gap semiconductors ...