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Solution growth of SiC

Demonstration of top seeded solution growth as an alternative route to Vapor Phase Growth for the growth of silicon carbide bulk single crystals.

  • Yun Ji Shin (PhD student)
  • Kanaparin Ariyawong (PhD student)
  • Dr. Seongmin Jeong (Visiting scientist)
  • Prof. Takeshi Yoshikawa (FAME invited Professor)

  • Nagoya University (Japan) - Prof. T. Ujihara
  • Tokyo University (Japan) – Prof. T. Yoshikawa
  • KICET (Korea) – Dr. SM. Jeong
  • Dong-Eui University (Korea) – Prof. WJ. Lee
  • LMI, Lyon University (France) - Dr. G. Ferro


Crystal Growth Research Lines


A numerical model has been implemented with the aim of giving quantitative outcomes in addition to qualitative information. The major role of the convection patterns on the carbon flux is demonstrated. A good agreement between computed and experimental growth rates is obtained as a function of temperature, making simulation an adapted predictive tool for the further development of the process.
Carbon supersaturation distribution in liquid silicon for the TSSG growth of SiC at 1800°C
(Crystal growth & Design, 2012).

Main publications

J. Lefebure, J.M. Dedulle, T. Ouisse, D. Chaussende,
Modeling of the growth rate during top seeded solution growth of SiC using pure silicon as a solvent, Crystal growth & Design, Vol. 12 (2012) p. 909-913.

K. Seki, Alexander, S. Kozawa, T. Ujihara, P. Chaudouet, D. Chaussende, Y. Takeda,
Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system, Journal of Crystal Growth, Vol. 335 (2011) p. 94-99.

F. Mercier, J.M. Dedulle, D. Chaussende, M. Pons,
Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth, Journal of Crystal Growth, Vol. 312 (2010) p. 155-163.

Date of update March 5, 2015

Université Grenoble Alpes