OBJECTIVES
NON PERMANENT STAFF
COLLABORATIONS
Demonstration of top seeded solution growth as an alternative route to Vapor Phase Growth for the growth of silicon carbide bulk single crystals.
NON PERMANENT STAFF
- Yun Ji Shin (PhD student)
- Kanaparin Ariyawong (PhD student)
- Dr. Seongmin Jeong (Visiting scientist)
- Prof. Takeshi Yoshikawa (FAME invited Professor)
COLLABORATIONS
- Nagoya University (Japan) - Prof. T. Ujihara
- Tokyo University (Japan) – Prof. T. Yoshikawa
- KICET (Korea) – Dr. SM. Jeong
- Dong-Eui University (Korea) – Prof. WJ. Lee
- LMI, Lyon University (France) - Dr. G. Ferro
Contact
Projects
- ANR Blanc MINTEX
- ARC Energie - Région Rhône-Alpes
- KETEP International R&D project (French-Korean)
Crystal Growth Research Lines
- Solution growth of SiC
- Vapour phase growth of SiC
- MAX phases
- Defects and microsctructure in wide bandgap semiconductors
- Instability and reactivity under pressure
Highlight
A numerical model has been implemented with the aim of giving quantitative outcomes in addition to qualitative information. The major role of the convection patterns on the carbon flux is demonstrated. A good agreement between computed and experimental growth rates is obtained as a function of temperature, making simulation an adapted predictive tool for the further development of the process.
Carbon supersaturation distribution in liquid silicon for the TSSG growth of SiC at 1800°C
(Crystal growth & Design, 2012).
(Crystal growth & Design, 2012).
Main publications
J. Lefebure, J.M. Dedulle, T. Ouisse, D. Chaussende,
Modeling of the growth rate during top seeded solution growth of SiC using pure silicon as a solvent, Crystal growth & Design, Vol. 12 (2012) p. 909-913.
K. Seki, Alexander, S. Kozawa, T. Ujihara, P. Chaudouet, D. Chaussende, Y. Takeda,
Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system, Journal of Crystal Growth, Vol. 335 (2011) p. 94-99.
F. Mercier, J.M. Dedulle, D. Chaussende, M. Pons,
Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth, Journal of Crystal Growth, Vol. 312 (2010) p. 155-163.
Modeling of the growth rate during top seeded solution growth of SiC using pure silicon as a solvent, Crystal growth & Design, Vol. 12 (2012) p. 909-913.
K. Seki, Alexander, S. Kozawa, T. Ujihara, P. Chaudouet, D. Chaussende, Y. Takeda,
Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system, Journal of Crystal Growth, Vol. 335 (2011) p. 94-99.
F. Mercier, J.M. Dedulle, D. Chaussende, M. Pons,
Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth, Journal of Crystal Growth, Vol. 312 (2010) p. 155-163.