OBJECTIVES
NON PERMANENT STAFF
COLLABORATIONS
- A better understanding of extended defects, microstructures and properties in wide bandgap semiconductors.
- Exploring new wide bandgap semiconductor compounds.
NON PERMANENT STAFF
- Le Thi Mai Hoa (PhD student)
- LE TRAN Hoang Long (PhD student)
COLLABORATIONS
- TYNDALL National Institute, (Ireland)- Dr. M. Modreanu
- LSPM, Université Paris 13, Villetaneuse (France) - Prof. J. Achard
- Institut NÉEL / Nano, Grenoble (France)-McF J. Pernot
- CEA INAC, Grenoble (France) - Dr. E. Monroy
- LMGP / FM2N team, Grenoble (France) - Dr. V. Consonni
Contact
Projects
Crystal Growth Research Lines
- Solution growth of SiC
- Vapour phase growth of SiC
- MAX phases
- Defects and microsctructure in wide bandgap semiconductors
- Instability and reactivity under pressure
Highlight
- Study of the 3C- to 6H-SiC polytypic transition at high temperature using high resolution X-ray diffuse scattering.
- High resolution microscopic analysis of III-Nitrides nanostructures (quantum wells and dots).
- Development of birefringence microscopy as a qualitative and quantitative tool to study dislocations in WBG semiconductors.
Experimental and simulated birefringence patterns of a dislocation in 6H-SiC.
The best fit is obtained with b=2a.
(Journal of Crystal Growth, 2012)
Main publications
V. Consonni, E. Sarigiannidou, E. Appert, A. Bocheux, S. Guillemin, F. Donatini, I.C. Robin, J. Kioseoglou, F. Robault
Selective Area Growth of Well-Ordered ZnO Nanowire Arrays with Controllable Polarity,
ACS Nano, Vol. 8 (2014) p. 4761-4770.
L. Monteagudo-Lerma, S. Valdueza-Felip, F. B. Naranjo, P. Corredera, L. Rapenne, E. Sarigiannidou, G. Strasser, E. Monroy, and M. González-Herráez
Waveguide saturable absorbers at 1.55µm based on intraband transitions in GaN/AlN QDs, OPTICS EXPRESS Vol. 21 (2013) p.27578-27586.
L.T.M. Hoa, T. Ouisse, D. Chaussende,
Critical assessment of birefringence imaging of dislocations in 6H silicon carbide,
Journal of Crystal Growth, Vol. 354 (2012) p. 202-207.
Selective Area Growth of Well-Ordered ZnO Nanowire Arrays with Controllable Polarity,
ACS Nano, Vol. 8 (2014) p. 4761-4770.
L. Monteagudo-Lerma, S. Valdueza-Felip, F. B. Naranjo, P. Corredera, L. Rapenne, E. Sarigiannidou, G. Strasser, E. Monroy, and M. González-Herráez
Waveguide saturable absorbers at 1.55µm based on intraband transitions in GaN/AlN QDs, OPTICS EXPRESS Vol. 21 (2013) p.27578-27586.
L.T.M. Hoa, T. Ouisse, D. Chaussende,
Critical assessment of birefringence imaging of dislocations in 6H silicon carbide,
Journal of Crystal Growth, Vol. 354 (2012) p. 202-207.