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Defects and microstructure in Wide Bandgap Semiconductors

  • A better understanding of extended defects, microstructures and properties in wide bandgap semiconductors.
  • Exploring new wide bandgap semiconductor compounds. 

  • Le Thi Mai Hoa (PhD student)
  • LE TRAN Hoang Long (PhD student)


  • TYNDALL National Institute, (Ireland)- Dr. M. Modreanu
  • LSPM, Université Paris 13, Villetaneuse (France) - Prof. J. Achard
  • Institut NÉEL / Nano, Grenoble (France)-McF J. Pernot
  • CEA INAC, Grenoble (France) - Dr. E. Monroy
  • LMGP / FM2N team, Grenoble (France) - Dr. V. Consonni

Crystal Growth Research Lines


  • Study of the 3C- to 6H-SiC polytypic transition at high temperature using high resolution X-ray diffuse scattering.
  • High resolution microscopic analysis of III-Nitrides nanostructures (quantum wells and dots).
  • Development of birefringence microscopy as a qualitative and quantitative tool to study dislocations in WBG semiconductors.

Experimental and simulated birefringence patterns of a dislocation in 6H-SiC.
The best fit is obtained with b=2a.
(Journal of Crystal Growth, 2012)

Main publications

V. Consonni, E. Sarigiannidou, E. Appert, A. Bocheux, S. Guillemin, F. Donatini, I.C. Robin, J. Kioseoglou, F. Robault
Selective Area Growth of Well-Ordered ZnO Nanowire Arrays with Controllable Polarity,
ACS Nano, Vol. 8 (2014) p. 4761-4770.

L. Monteagudo-Lerma, S. Valdueza-Felip, F. B. Naranjo, P. Corredera, L. Rapenne, E. Sarigiannidou, G. Strasser, E. Monroy, and M. González-Herráez
Waveguide saturable absorbers at 1.55µm based on intraband transitions in GaN/AlN QDs,  OPTICS EXPRESS Vol. 21 (2013) p.27578-27586.

L.T.M. Hoa, T. Ouisse, D. Chaussende,
Critical assessment of birefringence imaging of dislocations in 6H silicon carbide,
Journal of Crystal Growth, Vol. 354 (2012) p. 202-207.

Date of update March 5, 2015

Université Grenoble Alpes