SARIGIANNIDOU Eirini

Academic Activities

Coordinator of the Erasmus Mundus Joint Master Degree (EMJMD) Functional Advanced Materials Engineering (FAME+), since 2012
http://www.fame-master.eu/

Coordinator of EIT Raw Materials Labeled Master Advanced Materials for Innovation and Sustainability since 2016
https://amis-master.eitrawmaterials.eu/

Recherche activities

 

ORCID: 0000-0003-3779-445X

Keywords: Electron Microscopy techniques, Wide band gap Semiconductors, Nitrides, ZnO Nanostructures, Silicon Carbide, Aluminum Silicon Carbides, MBE, Crystal growth, X-ray absorption, MOD, Superconductors, Thermal treatments

 

Wide band gap Semiconductors studies (III-Nitrides, ZnO)

Structural Characterization: Use of Transmission Electron Microscopy (TEM) in high resolution, energy filtered, conventional, ASTAR and convergent beam modes to characterize nitrides and ZnO nanostructures (quantum wells, quantum dots and nanowires,…). Quantitative analysis of HRTEM images using the geometric phase analysis, a projection method and images simulations.
Epitaxy : Experience in Molecular Beam Epitaxy of III-nitride materials and heterostructures. In situ analytics of growth kinetics by RHEED.
X-ray Absorption spectroscopy (Synchrotron, ESRF): Use of x-ray linear dichroism (XLD) and x-ray magnetic circular dichroism (XMCD) techniques.
 

Crystal growth and characterization (Carbides, MAX phases)

Structural and Chemical Characterization: Use of electron microscopy techniques (TEM, HAADF, EDS, SEM) to characterize the microstructure, defects and chemical composition of bulk crystals (e.g. SiC, Al4SiC4, Cr2AlC,….)
Crystal growth: Experience on PVT growth of Silicon Carbide and Al-Si ternary carbides.
 

Superconductors

Structural Characterization: Use of TEM techniques to characterize the microstructure of superconducting layers (YBCO) and oxide buffer layers (LZO, CeO2) deposited on LaAlO3 and NiW substrates.
Chemical Deposition: Experience on Metal Organic Deposition (MOD) and various annealing treatments used for the growth of oxide buffer layers.