The research line Semiconducting Nanowires & Nanostructures aims at developing and exploring the chemical synthesis of spontaneously grown ZnO nanostructures/nanowires by chemical bath deposition (CBD) and metal-organic chemical vapour deposition (MOCVD). These methods of chemical synthesis can be coupled with technological processes in a cleanroom environment (i.e. lithography, etching, ...) in the framework of the selective area growth of these objects. We are specifically interested in elucidating and monitoring the nucleation and growth mechanisms of nanostructures/nanowires by coupling an experimental approach to a fundamental approach based on thermodynamic simulations. Our activity is also focused on the determination and control of the basic properties of these objects, such as their intrinsic/extrinsic doping (i.e. H, Al, Ga, Cu, ...), their polarity (O and Zn), as well as the effects related to their surfaces. Semiconducting heterostructures based on ZnO nanowires that are bare or combined with direct band gap semiconductors (Sb2S3, SnS, Ga2O3…) are being developed for piezoelectric, optoelectronic (i.e. self-powered UV photodetectors, light emitting diodes), and photovoltaic (i.e. extremely thin absorber solar cells) devices.
ANR SCENIC (2021-2024, collaborator) Type: Research National Agency, collaborative program call Title: Surface charge effects in functionalized GaN and ZnO nanowires: investigation and control Partnership: IMEP-LaHC (Grenoble), GEEPS (Paris-Saclay), C2N (Paris-Saclay)
ANR IMINEN (2023-2027, coordinator) Type: Research National Agency, collaborative program call Title: Elucidating & monitoring nanosized-effects in ZnO nanowires for piezoelectric applications Partnership: Institut Néel (Grenoble), LTM (Grenoble), LETI (Grenoble), LGEF (Lyon)