Wide & Ultra-Wide Bandgap Semiconducting Oxides

The Wide & Ultra-Wide Bandgap Semiconducting Oxides Research Line aims at developing and exploring the chemical synthesis of i) ZnO nanowires following the spontaneous and selective area growth approaches by chemical bath deposition (CBD) and ii) epitaxial Ga₂O₃ thin films by atomic layer deposition (ALD) and pulsed-liquid injection metal organic chemical vapor deposition (PLI-MOCVD). We are particularly interested in elucidating and controlling the nucleation and growth mechanisms, as well as the properties related to epitaxy, interfaces, and surfaces. We also determine and control the morphological, structural, and chemical properties of these objects, such as their intrinsic/extrinsic doping, polarity, the nature of involved defects, and surface-related effects. Advanced characterization techniques at the lab-scale (TEM, SEM/EDS, XRD, Raman spectroscopy, XPS) and at the synchrotron-scale (SAX, XRD) are regularly used to deepen our understanding of the structure-property relationship. Semiconducting heterostructures are also developed mainly for applications in the fields of piezoelectricity, UV photodetection, and power electronics. Finally, we are particularly interested in the multifactorial issues raised by the criticality of the raw materials used, as well as the environmental impact of our chemical deposition techniques assessed in the framework of green chemistry.

Vincent Consonni (contact)
Estelle Appert
Eirini Sarigiannidou
Isabelle Gélard

Muhammad Azhar (PhD)
Emilien Lefebvre (PhD)
Andy Séguret (PhD)
Juan-Carlos Trujillo-Yague (PhD)
Marielena Velasco Enriquez (PhD)
Catarina Vieira Matos (PhD)
Marty Volant (PhD)
Ilyass Jellal (Post-Doc)