Oxides for Nanoionic Devices

The research line Oxides for Nanoionic Devices focuses on the design and optimization of oxide heterostructures for applications in the nanoionics field. In particular, we study ion conducting and mixed ionic-electronic conducting (MIEC) oxides for their use in several microtechnology applications, such as micro Solid Oxide Fuel Cells and Electrolysers (µ-SOCs), valence change memories (VCMs) and neuromorphic computing systems. We are specialized in the deposition of perovskites, layered perovskite-related oxides and fluorites by Pulsed Injection Metal Organic Chemical Vapour Deposition (MOCVD) and Atomic Layer Deposition (ALD). Our main aim is to understand the relationship between the structural, physico-chemical and functional properties of single films and of engineered devices. In addition, we propose innovative ways of tuning the microstructure, ion transport, electrochemical and resistive switching properties of the materials to improve the performance of the final nanoionic device. For their characterization we combine the use of a large number of lab-based chemical, structural and electrochemical characterization techniques, with advanced in-situ and operando measurements in large-scale Synchrotron facilities.

[5] K. Maas et al. Advanced Functional Materials 30, 1909942 (2020). Article in the ESRF Highlights 2020 annual booklet
Tuning Memristivity by Varying the Oxygen Content in a Mixed Ionic-Electronic Conductor

[4] K. Maas et al. Journal of Materials Chemistry C 8, 464 (2020). Back cover
Using a Mixed Ionic Electronic Conductor to Build an Analog Memristive Device with Neuromorphic Programming Capabilities

[3] S. Bagdzevicius et al. Journal of Materials Chemistry C 7, 7580 (2019)
Superposition of Interface and Volume Type Resistive Switching in Perovskite Nanoionic Devices

[2] B. Meunier et al. ACS Applied Electronic Materials 1, 675 (2019)
Microscopic Mechanisms of Local Interfacial Resistive Switching in LaMnO_3+d

[1] R. Rodriguez-Lamas et al. Beilstein Journal of Nanotechnology 10, 389 (2019)
Integration of LaMnO_3+d Films on Platinized Silicon Substrates for Resistive Switching Applications by PI-MOCVD