ALTERNATIVE PEROVSKITE MATERIALS FOR RERAM MEMORIES: UNDERSTANDING AND TAILORING RESISTIVE SWITCHING
Projet ANR 2016-2019 (ANR-15-CE24-0018)Challenge 7: Information and Communication Society
Axe 10 : Micro and nanotechnologies for information and communication
Coordinator: Carmen Jiménez (LMGP)
IMEP-LaHC: Quentin Rafhay
CEA - Leti: Olivier Renault
UCCS - Lille : Caroline Pirovano
Site Alps Memories (private)
NEWS
Objectifs:
This project focused on basic research will be devoted to the study of resistive switching (RS) in perovskite materials with the aim of answering fundamental-science questions which will allow to move from fundamental studies of functional oxides to their direct application in emerging NVM devices by:
1. Better understanding of the nanoscale mechanisms governing the RS, charge carriers and interface effects.
2. Demonstrating the effectiveness and application of the optimized materials in reliable perovskite-based ReRAM memories with appropriate performance for non-volatile applications, i.e. fast switching speed, large programming window, high endurance and retention.
3. Evaluate the long-term viability of these perovskite-type memories using intrinsic device performance modelling tools that will allow the comparison of this type of memories with other technological options currently being considered.
This project focused on basic research will be devoted to the study of resistive switching (RS) in perovskite materials with the aim of answering fundamental-science questions which will allow to move from fundamental studies of functional oxides to their direct application in emerging NVM devices by:
1. Better understanding of the nanoscale mechanisms governing the RS, charge carriers and interface effects.
2. Demonstrating the effectiveness and application of the optimized materials in reliable perovskite-based ReRAM memories with appropriate performance for non-volatile applications, i.e. fast switching speed, large programming window, high endurance and retention.
3. Evaluate the long-term viability of these perovskite-type memories using intrinsic device performance modelling tools that will allow the comparison of this type of memories with other technological options currently being considered.
Participants
| LMGP | IMEP-LaHC | CEA Leti | UCCS Lille | PhD & Postdoc |
| Michel Boudard | Gérard Ghibaudo | Nicolas Chevalier | Rose-Noëlle Vannier | Klaasjan Mas |
| Monica Burriel | Xavier Mescot | Eugenie Martinez | Dolors Pla | |
| Odette Chaix | Sarunas Bagdzevicius | |||
| Etienne Pernot | ||||
| Laetitia Rapenne | ||||
| Hubert Renevier | ||||
| Hervé Roussel |
