This project focused on basic research will be devoted to the study of resistive switching (RS) in perovskite materials with the aim of answering fundamental-science questions which will allow to move from fundamental studies of functional oxides to their direct application in emerging NVM devices by:
1. Better understanding of the nanoscale mechanisms governing the RS, charge carriers and interface effects.
2. Demonstrating the effectiveness and application of the optimized materials in reliable perovskite-based ReRAM memories with appropriate performance for non-volatile applications, i.e. fast switching speed, large programming window, high endurance and retention.
3. Evaluate the long-term viability of these perovskite-type memories using intrinsic device performance modelling tools that will allow the comparison of this type of memories with other technological options currently being considered.