Publication de Valérie Stambouli
L'article intitulé "Aptasensors based on silicon nanowire field-effect transistors for electrical detection of thrombin" a été publié dans Microelectronic Engineering
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Ici vous trouverez l'article de V. Stambouli
"Arrays of silicon nanowire field-effect transistors (Si NWFETs) were built to detect thrombin (a model biomarker) electrically. The Si NWFETs were created using a conventional top-down CMOS process, allowing them to be co-integrated with CMOS readout circuits in the future. EHTES organosilane was then used to graft aptamer probes onto the HfO2 gate oxide of Si nanowires. We investigated the influence of aptamer grafting and thrombin recognition on the electrical transfer capabilities of Si NWFET aptasensors in details. Our technique was evaluated on a significant number of Si NWFETs, including two distinct chips with 30 aptasensors apiece. According to the findings, aptamer grafting increased the threshold voltage by a positive range of +28.8 mV to +87.7 mV, depending on the aptasensor employed. Thrombin identification, on the other hand, resulted in a negative shift of the threshold voltage between −26.6 and − 23.8 mV. These opposing voltage shifts coincide with the aptamer probes' and thrombin molecules' electric charges, respectively. These findings provide unique demonstration of Si NWFETs manufactured utilizing typical top-down CMOS processing methods, allowing these devices to be used in various biomedical and biosensing applications."
"Arrays of silicon nanowire field-effect transistors (Si NWFETs) were built to detect thrombin (a model biomarker) electrically. The Si NWFETs were created using a conventional top-down CMOS process, allowing them to be co-integrated with CMOS readout circuits in the future. EHTES organosilane was then used to graft aptamer probes onto the HfO2 gate oxide of Si nanowires. We investigated the influence of aptamer grafting and thrombin recognition on the electrical transfer capabilities of Si NWFET aptasensors in details. Our technique was evaluated on a significant number of Si NWFETs, including two distinct chips with 30 aptasensors apiece. According to the findings, aptamer grafting increased the threshold voltage by a positive range of +28.8 mV to +87.7 mV, depending on the aptasensor employed. Thrombin identification, on the other hand, resulted in a negative shift of the threshold voltage between −26.6 and − 23.8 mV. These opposing voltage shifts coincide with the aptamer probes' and thrombin molecules' electric charges, respectively. These findings provide unique demonstration of Si NWFETs manufactured utilizing typical top-down CMOS processing methods, allowing these devices to be used in various biomedical and biosensing applications."