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Synthèse et propriétés de monocristaux, de poudres, films minces ou hétérostructures

Etudes à l'interface avec la matière biologique

> LMGP_ Recherche > Nano

Publication de Quang Chieu Bui de l'Axe NNS

Publié le 23 août 2023
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Communiqué du 23 août 2023 au 8 novembre 2023

L'article intitulé "High figure-of-merit in Al-doped ZnO thin films grown by ALD through the Al content adjustment" a été publié dans Materialia.

MaterBui2023

MaterBui2023

Ici vous trouverez l'article de Quang Chieu Bui de l'Axe NNS :
"The development of transparent conductive materials is of great interest for a wide variety of semiconducting devices in the fields of optoelectronics and photovoltaics. Here, we optimize the growth and properties of aluminum-doped ZnO (AZO) thin films as an eco-friendly transparent electrode by using atomic layer deposition (ALD) with diethylzinc (DEZn), water vapor and trimethylaluminium (TMA) as zinc, oxygen, and aluminum chemical precursors, respectively. The cycle ratio of DEZn to TMA using ALD is adjusted to control the Al atomic concentration over a broad range of 0.3 - 6.7% while optimizing the structural, optical, and electrical properties of AZO thin films. By incorporating a sufficient amount of Al dopants around 1.1%, we obtain a high quality AZO thin film exhibiting a low electrical resistivity of 6.3 × 10−4 Ω·cm. This AZO thin film grown on quartz substrate also demonstrates an average optical transmittance in the visible range above 85% as well as a high figure-of-merit of 6.4 × 10−3 Ω−1, while maintaining its highly c-axis oriented structure. The present optical and electrical properties result in the fabrication of AZO thin films by ALD with a high figure-of-merit that is highly suitable for many semiconducting devices."
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mise à jour le 23 août 2023

  • Tutelle CNRS
  • Tutelle Grenoble INP
Université Grenoble Alpes