Thesis defence by Raquel RODRIGUEZ LAMAS

Resistive switching in LaMnO3+? based heterostructures for Valence Change Memories
ReRAM perovskite manganite Valence change memories (VCM) resistive switching

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With the fast development of information technologies, the need for a new generation of storage devices with higher storage capacity, faster operation velocity and lower power consumption arises. Resistive switching based non-volatile memories emerged among the promising candidates, among which manganites have received increasing attention. In this thesis we focus on LaMnO3+ δ (LMO), as a potential candidate for resistive switching valence change memories (VCM). The work presented in this manuscript covers: i) the growth of LMO epitaxial and polycrystalline films by pulsed injection metal organic chemical vapor deposition ; ii) the study of the oxygen mass transport properties in epitaxial films; iii) the growth of polycrystalline LMO on platinized silicon taking a step towards CMOS integration while controlling the oxygen stoichiometry of the film; iv) the preparation of meta1/LMO/metal devices in clean room facilities, as well as the design and fabrication of devices compatible with operando advanced characterization, and finally v) the electrical characterization of the TiN/LMO/Pt memory prototype

Membres du jury/ Jury members :



Unité de catalyse et chimie du solide (UCCS), Ecole nationale superieure de Chimie de Lille, Villeneuve d’Ascq (France)




Laboratoire des technologies de la microelectronique (LTM), UGA, Grenoble (France)




FEMTO-ST Instituta, Université de Franche-Comté, Besancon, (France)




Materials Science Institute of Barcelona (ICMAB-CSIC), Bellaterra, (Spain)


M. Boudard

LMGP, CNRS, Grenoble INP Minatec, Grenoble (France)

Thesis Director


Date infos
2 p.m. - Salle des Conseils Z-704, 7th floor, Building Z (Grenoble INP Phelma building)
Location infos
Grenoble INP - Phelma
3 parvis Louis Néel - 38000 Grenoble
Accès : TRAM B arrêt Cité internationale
Free entrance - No registration