Thesis defence by Raquel RODRIGUEZ LAMAS

With the fast development of information technologies, the need for a new generation of storage devices with higher storage capacity, faster operation velocity and lower power consumption arises. Resistive switching based non-volatile memories emerged among the promising candidates, among which manganites have received increasing attention. In this thesis we focus on LaMnO_{3+ δ} (LMO), as a potential candidate for resistive switching valence change memories (VCM). The work presented in this manuscript covers: i) the growth of LMO epitaxial and polycrystalline films by pulsed injection metal organic chemical vapor deposition ; ii) the study of the oxygen mass transport properties in epitaxial films; iii) the growth of polycrystalline LMO on platinized silicon taking a step towards CMOS integration while controlling the oxygen stoichiometry of the film; iv) the preparation of meta1/LMO/metal devices in clean room facilities, as well as the design and fabrication of devices compatible with operando advanced characterization, and finally v) the electrical characterization of the TiN/LMO/Pt memory prototype