Two-dimensional semiconducting metal dichalcogenides (TMDs) such as MoS₂ and WS₂ are potential candidates for More-than-Moore technologies (chemical sensors, photodetectors, memories, RF devices, etc.), thanks to their highly anisotropic and tunable optoelectronic properties, and good chemical robustness. However, their synthesis requires high temperatures (> 850 °C), hindering a direct implementation on silicon-based integrated circuits (collapsing above 450-500°C). In this thesis work, two approaches based on sulfurization of metal or metal oxides have been implemented in order to realize different types of lamellar metal sulfides including WS₂, SnS₂ and SnS at low temperatures. The first approach was based on the use of nickel as a crystallization promoter for the synthesis of ultra-thin WS₂ layers via the sulfurization of Ni/W thin films using an organosulfur precursor: the 1,2-ethanedithiol. This approach successfully afforded highly crystalline and (001)-oriented WS₂ layers at temperatures as low as 650 °C whereas without Ni, higher temperature (above 850 °C) would have been necessary to obtain a similar crystallinity. The second approach consisted in the synthesis of SnS₂, a post-transition metal disulfide sharing similar structural and physicochemical properties with MoS₂ and WS₂, but crystallizing at much lower temperature. Starting from ultrathin ALD-deposited SnO₂ layers, highly crystalline (001)-oriented SnS₂ and SnS films were selectively obtained by organosulfur-mediated sulfurization using either t-butyl disulfide (for SnS₂) or t-butylthiol (for SnS) at temperatures as low as 350 °C. For both approaches, thorough physicochemical characterization are provided, and the conversion mechanisms are discussed.