New Crystal Growth paper by T. Ouisse
The paper "Magnetotransport properties of nearly-free electrons in two-dimensional hexagonal metals and application to the M(n+1)AX(n) phases" has been published in Physical Review B
You will find here the paper by Thierry Ouisse. The abstract is:
" We propose a general, yet simple model for describing the weak field magnetotransport properties of nearly-free electrons in two-dimensional hexagonal metals. We modify this model so as to apply it to the magnetotransport properties of the n+1AXn phases, a particular class of nanolamellar carbides and nitrides. We argue that the values of the in-plane Hall coefficient and the in-plane parabolic magnetoresistance are due to the specific shape of the Fermi surface of almost two-dimensional hole and electron bands. If the contribution of the electron pockets to in-plane resistivity is often (but not always) predicted to be a minor one, in contrast, both holes and electrons should substantially contribute to the overall value of the in-plane Hall coefficient. The relevance of our model is supported by elementary considerations and a set of experimental data obtained from single crystals of V2AlC and Cr2AlC. In particular, we obtain a high ratio between the in-plane (ρab) and parallel to the c axis (ρc) resistivities."
DOI:10.1103/PhysRevB.92.045133
" We propose a general, yet simple model for describing the weak field magnetotransport properties of nearly-free electrons in two-dimensional hexagonal metals. We modify this model so as to apply it to the magnetotransport properties of the n+1AXn phases, a particular class of nanolamellar carbides and nitrides. We argue that the values of the in-plane Hall coefficient and the in-plane parabolic magnetoresistance are due to the specific shape of the Fermi surface of almost two-dimensional hole and electron bands. If the contribution of the electron pockets to in-plane resistivity is often (but not always) predicted to be a minor one, in contrast, both holes and electrons should substantially contribute to the overall value of the in-plane Hall coefficient. The relevance of our model is supported by elementary considerations and a set of experimental data obtained from single crystals of V2AlC and Cr2AlC. In particular, we obtain a high ratio between the in-plane (ρab) and parallel to the c axis (ρc) resistivities."
DOI:10.1103/PhysRevB.92.045133