L'article intitulé "Role of pO2 and film microstructure on the memristive properties of La2NiO4+delta / LaNiO3-delta bilayers" a été publié dans Journal of Materials Chemistry A.
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Ici vous trouverez l'article de Monica Burriel:
"LaNiO3/La2NiO4 bilayers deposited at varying pO2 conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO3/La2NiO4/Pt devices. The devices deposited at low pO2 showed the largest memristance. We propose this is due to the formation of a p-type Schottky contact between LaNiO3 and La2NiO4, where the extent of its carrier depletion width can be modulated by the electric-field induced drift of interstitial oxygen ions acting as mobile acceptor dopants in La2NiO4."