L'article intitulé "Out of stoichiometry CuCrO2 films as promising p-type TCO for transparent electronics" a été publié dans Materials Advances.
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Ici vous trouverez l'article de L. Bottigileri
"In this work, we report the enhancement of functional properties of CuCrO2, a promising p-type conductive and transparent oxide, achieved in out of stoichiometry CuCrO2 thin films synthesized by aerosol-assisted chemical vapor deposition. Out of stoichiometry films consisting in Cr-deficient i.e. Cu-rich CuCrO2 phase, have a resistivity of 0.05 Ω.cm and an average transmittance of 58% in the visible range, resulting in a Gordon’s Figure of Merit of 2200 µS. This is the highest ever published Figure of Merit among Cu-rich CuCrO2 synthesized by chemical methods. A remarkable result is that when further increasing the Cu/(Cu+Cr) ratio , the formation of CuO was non detected, allowing the synthesis of composite films formed by Cu2O and CuCrO2p-type oxides, which are more conductive than the Cu-rich CuCrO2 phase. These nanocomposite films present an improved carrier mobility, with a resistivity around 0.02 Ω.cm, and a reduced energy gap, with a transmittance of 52%, resulting in a Figure of Merit of 1400µS. Both of these thin films can find application as hole transport layer in various transparent optoelectronic devices where p-type TCOs are required, specially when synthesized by a solution-based process at low temperature and ambient pressure over large surface areas."