Publication de Françoise Hippert
L'article intitulé "Nanocomposites of Chalcogenide Phase-Change Materials: from C doping of Thin Films to Advanced Multilayers" a été publié dans Journal of Materials Chemistry C.
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Ici vous trouverez l'article de Françoise Hippert :
"The engineering of chalcogenide phase-change materials at the nanoscale is required to improve the performances of ultimate size memory devices and reduce their power consumption. Amorphous C-doped GeTe thin films and innovative multilayers consisting of periodic stacks of a few nm thick GeTe, or Ge2Sb2Te5, and C layers with a thickness between 0.5 and 2 nm are deposited by magnetron sputtering at room temperature. The phase-change material is then crystallized by heat treatment. In C-doped GeTe films, the phase separation of C and GeTe during the GeTe crystallization leads to the spontaneous formation of a nanocomposite, consisting of amorphous C located at the grain boundaries of GeTe crystallites, but the resulting nanostructure is highy disordered. In contrast, the deposition of multilayers allows to control the nanostructure and the interfaces between the phase-change material and the C phase. Transmission electron microscopy and x-ray diffraction at room temperature and as a function of temperature during annealing show that the multilayer structure is kept after crystallization of the phase-change material, even when the thickness of C layer is as small as 0.5 nm. The GeTe and Ge2Sb2Te5 crystallites are anisotropic, their size in the direction perpendicular to the layers being determined by the design of the multilayer. The crystallisation temperature of the GeTe and Ge2Sb2Te5 layers depends on the structure of the stack, revealing scaling and stress effects. The results presented show that GeTe/C and Ge2Sb2Te5/C MLs are promising for applications in memory devices and also in photonic and thermoelectric devices."
"The engineering of chalcogenide phase-change materials at the nanoscale is required to improve the performances of ultimate size memory devices and reduce their power consumption. Amorphous C-doped GeTe thin films and innovative multilayers consisting of periodic stacks of a few nm thick GeTe, or Ge2Sb2Te5, and C layers with a thickness between 0.5 and 2 nm are deposited by magnetron sputtering at room temperature. The phase-change material is then crystallized by heat treatment. In C-doped GeTe films, the phase separation of C and GeTe during the GeTe crystallization leads to the spontaneous formation of a nanocomposite, consisting of amorphous C located at the grain boundaries of GeTe crystallites, but the resulting nanostructure is highy disordered. In contrast, the deposition of multilayers allows to control the nanostructure and the interfaces between the phase-change material and the C phase. Transmission electron microscopy and x-ray diffraction at room temperature and as a function of temperature during annealing show that the multilayer structure is kept after crystallization of the phase-change material, even when the thickness of C layer is as small as 0.5 nm. The GeTe and Ge2Sb2Te5 crystallites are anisotropic, their size in the direction perpendicular to the layers being determined by the design of the multilayer. The crystallisation temperature of the GeTe and Ge2Sb2Te5 layers depends on the structure of the stack, revealing scaling and stress effects. The results presented show that GeTe/C and Ge2Sb2Te5/C MLs are promising for applications in memory devices and also in photonic and thermoelectric devices."