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Synthèse et propriétés de monocristaux, de poudres, films minces ou hétérostructures

Etudes à l'interface avec la matière biologique

> LMGP_ Recherche > Nano

Publication de Carlos Moncasi

Publié le 12 juillet 2022
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Communiqué du 12 juillet 2022 au 26 septembre 2022

L'article intitulé "Structural Defects Improve the Memristive Characteristics of Epitaxial La0.8Sr0.2MnO3-Based Devices" a été publié dans Advanced Materials Interfaces.

AMI_carlos

AMI_carlos

Ici vous trouverez l'article de Carlos Moncasi :
"Interface-type valence change memories (VCMs) are exciting candidates for multilevel storage in resistive random access memories (RRAM) and as artificial synapses for neuromorphic computing. Several materials have been proposed as VCM candidates and, depending on the materials and electrodes of choice, different switching mechanisms take place leading to the change in resistance. Here, the focus is on La0.8Sr0.2MnO3–δ (LSM) perovskite and, particularly, the role of its nanostructure on the memristive device performance. The nanostructural details of the layers are modified by growing LSM epitaxial thin films on different substrates, i.e., SrTiO3 (STO) and LaAlO3 (LAO), by metal-organic chemical vapor deposition (MOCVD). An interface-type memristive response is observed using Ti as active electrode and Pt as inert electrode. The modifications in the nanostructure of LSM (strain and dislocations) determine the memristive performance, leading to differences in cycle to cycle reproducibility and multilevel capabilities by the modification of the LSM's oxygen migration properties. The results show that nanostructure engineering is a promising approach for optimizing the performance of memristive devices, an approach which can also be extended and applied to other nanoionic electrochemical devices."
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mise à jour le 12 juillet 2022

  • Tutelle CNRS
  • Tutelle Grenoble INP
Université Grenoble Alpes