Papier de Hayri Okcu 2025
L'article intitulé "Open-Air deposition of Submicron Self-Textured ZnO thin films with high piezoelectric coefficients and oxygen polarity" a été publié dans Applied Surface Sciences
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" The influence of growth temperature and thickness of zinc oxide (ZnO) films was systematically studied to improve their piezoelectric response by controlling the film growth mechanism. Non-epitaxial film growth was carried out on a Si/SiO2 surface in an open-air environment using the Atmospheric Pressure Spatial Atomic Layer Deposition (AP-SALD) method. The films were deposited at temperatures ranging from 60 to 300 °C, in 30 °C increments—with 1000, 1500, and 2000 ALD cycles for each temperature step. The process shows ALD-like growth at a rate of 1.2 Å/cycle within a temperature range of 210–240 °C. A preferred c-axis orientation was achieved within the 210–270 °C deposition temperature range. Orientation mapping analysis indicated random film orientations during the initial growth phases. However, above a thickness of 100 nm, the films showed a more stabilized c-axis orientation. Piezoelectric Force Microscopy (PFM) results demonstrated that the films exhibited a strong O-polar phase with no evidence of a Zn-polar phase, highlighting a level of high-quality and well-polarized piezoelectric domains that is rarely achieved. Furthermore, an effective piezoelectric constant of 4.3 pm V−1 (d*33) was achieved, which is highly impressive given the film thickness of only 250 nm. This research highlights the potential of AP-SALD for the deposition of enhanced piezoelectric materials at relatively low temperatures, presenting a scalable method for film growth. The findings establish a robust foundation for future research and application of ZnO films in piezoelectric devices, suggesting that precise control over growth parameters can significantly enhance device performance."
" The influence of growth temperature and thickness of zinc oxide (ZnO) films was systematically studied to improve their piezoelectric response by controlling the film growth mechanism. Non-epitaxial film growth was carried out on a Si/SiO2 surface in an open-air environment using the Atmospheric Pressure Spatial Atomic Layer Deposition (AP-SALD) method. The films were deposited at temperatures ranging from 60 to 300 °C, in 30 °C increments—with 1000, 1500, and 2000 ALD cycles for each temperature step. The process shows ALD-like growth at a rate of 1.2 Å/cycle within a temperature range of 210–240 °C. A preferred c-axis orientation was achieved within the 210–270 °C deposition temperature range. Orientation mapping analysis indicated random film orientations during the initial growth phases. However, above a thickness of 100 nm, the films showed a more stabilized c-axis orientation. Piezoelectric Force Microscopy (PFM) results demonstrated that the films exhibited a strong O-polar phase with no evidence of a Zn-polar phase, highlighting a level of high-quality and well-polarized piezoelectric domains that is rarely achieved. Furthermore, an effective piezoelectric constant of 4.3 pm V−1 (d*33) was achieved, which is highly impressive given the film thickness of only 250 nm. This research highlights the potential of AP-SALD for the deposition of enhanced piezoelectric materials at relatively low temperatures, presenting a scalable method for film growth. The findings establish a robust foundation for future research and application of ZnO films in piezoelectric devices, suggesting that precise control over growth parameters can significantly enhance device performance."