Aller au menu Aller au contenu
Synthèse et propriétés de monocristaux, de poudres, films minces ou hétérostructures

Etudes à l'interface avec la matière biologique

> LMGP_ Recherche > Nano

Papier d'Evgenii Skopin 2020

Publié le 17 mai 2020
A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail cet article Facebook Twitter Linked In
Communiqué du 10 mai 2020 au 27 juillet 2020

Le papier "In situ x-ray studies of the incipient ZnO atomic layer deposition on In0.53Ga0.47As" a été publié dans Physical Review Materials

PRB Evgenii

PRB Evgenii

Ici vous trouverez le papier d'Evgenii Skopin
 " We describe in detail how ZnO films grow on In0.53Ga0.47As substrates by atomic layer deposition (ALD), employing a suite of in situ synchrotron x-ray techniques. Combining results from different measurements allows the distinguishment of three different growth behaviors: an initial, slow linear growth, often referred to as a growth delay (regime I), followed by a nonlinear growth (regime II), and finally, a steady, linear growth (regime III), the last of which is the self-limited growth behavior characteristic of ALD. By the end of regime I, the In0.53Ga0.47As surface is covered with an ultrathin, poorly ordered Zn oxide layer. The transition from regime I to II is clearly evidenced by the appearance in the x-ray absorption spectra of characteristic features of the wurtzite structure, as well as the nucleation and growth of ZnO grains (three-dimensional) on top of the poorly ordered Zn oxide layer. Regime II ends when the growth per cycle reaches a constant level. We show that the water pressure during growth has an impact on the duration of the growth delay (regime I), unlike the substrate temperature. In the regime of steady growth, we observe that the rate of deposition obtained for all temperatures inside the ALD window is 0.17 nm cy1. The deposition temperature has clear effects on the film texture and initial crystallization behavior, as well as the final crystallinity and thicknesses of the layers adjacent to the In0.53Ga0.47As substrate. Based on the experimental results and earlier ab initio calculations and Monte Carlo simulations of ZnO ALD on ZnO, we suggest reaction mechanisms consistent with our findings, and we present a model of growth starting from the very earliest stages of deposition to the steady growth regime.."


A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail cet article Facebook Twitter Linked In

mise à jour le 17 mai 2020

  • Tutelle CNRS
  • Tutelle Grenoble INP
Université Grenoble Alpes