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Metal/Oxide/Metal heterostructures built from Mixed Ionic Electronic Conducting (MIEC) oxides show very promising resistive switching characteristics and multilevel resistance states. This makes them ideal candidates for alternative non-volatile memories, but also as building blocks for neuromorphic computing (artificial synapses). In contrast to the more common filamentary switching, MIEC-based devices have been shown to switch homogeneously over the whole device area and might therefore be superior with respect to their cell-to-cell and cycle-to-cycle variation. Following the previous work on single-layer memristors of MIECs (nickelates) in which we discovered very interesting analogue-type resistance changes with potentiation/depression, transience (“forgetting”) and “learning” behavior, here we propose to go a step further and combine the use of these materials with an additional YSZ (yttrium-stabilized-zirconia) thin film as oxygen storage/release layer to better control and improve the performance of these memristive devices.