“Smart Sensors on CMOS for environmental quality monitoring”
Prof. Abdelkader SOUIFI
INSA de Lyon
Laboratoire Ampère, Département Bio-ingénierie
Laboratoire des Technologies de la Microélectronique, Equipe PROSPECT
Abstract
In the context of IoT and the growing demand for real-time measurements, technologies based on ultra-sensitive and ultra-low-power sensors offer real advantages. “Smart Sensors” are crucial technological building blocks for a wide range of applications including information technologies (IT), automotive, industrial systems, health monitoring, environmental quality monitoring...
Fully depleted Silicon on Insulator (FDSOI) field effect transistors (FETs) combined with sensitive materials compatible with the Back-End-of-Line (BEOL) can be used as ultra-sensitive and autonomous electrochemical transducers. This talk will first present pH sensors (ISFETs) integrated on industrial 28 nm FDSOI CMOS platform[1] using ALD deposited aluminum oxide as sensing layers. Research activities on sensing materials for environmental sensors for air and water quality monitoring will also be presented and discussed.[1] G. Ayele et al. “Ultrahigh-Sensitive CMOS pH Sensor on 28 nm FDSOI”, IEEE Journal of the Electron Devices Society, 2018
Infos date
Grenoble INP - Phelma
3 parvis Louis Néel - 38000 Grenoble
Accès : TRAM B arrêt Cité internationale
3 parvis Louis Néel - 38000 Grenoble
Accès : TRAM B arrêt Cité internationale
Infos lieu
10 H - Salle des Séminaires
2ème étage - LMGP
2ème étage - LMGP