“ Development of low-temperature processes for the synthesis of lamellar (2D) sulfides “
Bhobnibhit CHATMANEERUNGCHAROEN
Ph.D. student,
LMGP, CEA-LETI
Abstract
2D metal dichalcogenides (TMDs) are potential candidates for More-than-Moore technologies and find applications in chemical sensors, photodetectors, and batteries. Semiconducting metal disulfides such as MoS2 and WS2 have been extensively studied due to their electrical properties, mechanical properties and chemical robustness. However, their synthesis requires high temperature (> 800°C), hindering the use of such materials on silicon-based integrated circuits (collapsing above 450-500°C). During my thesis work, several approaches based on sulfurization of metal or metal oxides have been implemented in order to realize different types of metal sulfides including WS2, SnS2 and SnS at low temperatures. At first, 002-oriented WS2 layers were produced by sulfurization of a pre-deposited tungsten thin layer using an organosulfur source (as an alternative to H2S). Improvement of WS2 crystallinity was successfully achieved using Nickel as crystallization promoter, allowing the formation of highly crystalline WS2 thin films at temperatures as low as 650 °C (vs. > 850°C for unpromoted WS2). Nonetheless, removal of NiSx residues is still a challenge. Finally, sulfurization of SnO2 with different organosulfur sources successfully demonstrated its ability to selectively produce either SnS2 or SnS thin films below 350 °C, with a preferential orientation of SnS2 and SnS crystals on amorphous SiO2 substrates.
Infos date
Grenoble INP - Phelma
3 parvis Louis Néel - 38000 Grenoble
Accès : TRAM B arrêt Cité internationale
3 parvis Louis Néel - 38000 Grenoble
Accès : TRAM B arrêt Cité internationale
Infos lieu
14 H - Salle des Conseils Z 704
7ème étage - Bâtiment Z
7ème étage - Bâtiment Z