Atomic layer deposition (ALD) and its spatial variant (SALD) allow for the conformal coating of any geometry with atomic-scale precision, leading to applications in nanotechnology, microelectronics, and optoelectronics. These techniques commonly use pyrophoric compounds, which react violently with air, complexifying deposition and transport. However, the intrinsically higher deposition rate in SALD could allow the study of precursors which are less dangerous, more efficient, and/or more eco-friendly without compromising productivity compared with an ALD process using a pyrophoric precursor. To this end, Zn(DMP)₂ 8and Ga(DMP)Me₂ are studied as non-pyrophoric precursors for the deposition of zinc and gallium-containing oxides, while a general fundamental model is proposed for SALD and compared to numerical simulations.

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