Publication de Dorina Papanastasiou 2026
L'article "MoS2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing" a été publié dans Advanced Electronic Materials
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"A cleanroom-free process was developed for the fabrication of ultralow-power resistive switching devices. Sub-micron-thick silver (Ag) electrodes are printed by XTPL's Ultraprecise Dispensing technology in a fully additive process. Two-layer molybdenum disulfide (MoS2) is used as the active layer, which was prepared and deposited by the Langmuir-Schaefer technique. Devices with 30 × 30 µm2 with volatile and non-volatile operation were produced. These exhibit SET and RESET voltages of 0.32 ± 0.09 V and −0.29 ± 0.09 V, respectively, a memory window up to 106, an endurance of 300 cycles achieved by voltage sweep, and stable operation under vacuum. The devices can retain the state for over 105 s. By employing high-resolution printing techniques and an ultra-conformable liquid-based two-dimensional materials deposition process, cost-efficient and high-performance resistive switching devices were fabricated for next-generation computation and communication."
"A cleanroom-free process was developed for the fabrication of ultralow-power resistive switching devices. Sub-micron-thick silver (Ag) electrodes are printed by XTPL's Ultraprecise Dispensing technology in a fully additive process. Two-layer molybdenum disulfide (MoS2) is used as the active layer, which was prepared and deposited by the Langmuir-Schaefer technique. Devices with 30 × 30 µm2 with volatile and non-volatile operation were produced. These exhibit SET and RESET voltages of 0.32 ± 0.09 V and −0.29 ± 0.09 V, respectively, a memory window up to 106, an endurance of 300 cycles achieved by voltage sweep, and stable operation under vacuum. The devices can retain the state for over 105 s. By employing high-resolution printing techniques and an ultra-conformable liquid-based two-dimensional materials deposition process, cost-efficient and high-performance resistive switching devices were fabricated for next-generation computation and communication."