Publication d'Andy Séguret
L'article intitulé "Molecular Beam Epitaxy of Al-Polar Wurtzite AlN(0001) on beta-Ga2O3(-201) Substrates" a été publié dans ACS Materials Letters.
Ici vous trouverez l'article d'Andy Séguret :
"This study explores the challenging heteroepitaxial growth of wurtzite AlN on monoclinic β-Ga2O3(-201) using plasma-assisted molecular beam epitaxy. By optimizing various nucleation and growth conditions, particularly the Al/N flux ratio, we achieve optimal surface morphology and structural quality. Substrate nitridation growth under N-rich conditions is found to favor the formation of smooth AlN with a sharp nitride/oxide heterointerface, whereas Al-rich conditions lead to the formation of rougher AlN textured along the <0001> direction but with highly twisted grains. Comprehensive structural analyses show the growth of a high-quality AlN(0001) layer with a homogeneous Al polarity on β-Ga2O3(-201), exhibiting an epitaxial relationship of AlN[2-1-10] // β-Ga2O3[020]. The present findings, supported by theoretical calculations reporting the formation of a two-dimensional electron gas with a charge interface density higher than 1013 cm–2, open important perspectives for the development of next generation power electronic devices made of ultrawide band gap semiconductors."
"This study explores the challenging heteroepitaxial growth of wurtzite AlN on monoclinic β-Ga2O3(-201) using plasma-assisted molecular beam epitaxy. By optimizing various nucleation and growth conditions, particularly the Al/N flux ratio, we achieve optimal surface morphology and structural quality. Substrate nitridation growth under N-rich conditions is found to favor the formation of smooth AlN with a sharp nitride/oxide heterointerface, whereas Al-rich conditions lead to the formation of rougher AlN textured along the <0001> direction but with highly twisted grains. Comprehensive structural analyses show the growth of a high-quality AlN(0001) layer with a homogeneous Al polarity on β-Ga2O3(-201), exhibiting an epitaxial relationship of AlN[2-1-10] // β-Ga2O3[020]. The present findings, supported by theoretical calculations reporting the formation of a two-dimensional electron gas with a charge interface density higher than 1013 cm–2, open important perspectives for the development of next generation power electronic devices made of ultrawide band gap semiconductors."