Nouvel article de Stephane Brochen

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"Temperature-dependent Hall effect and resistivity measurements are performed on polycrystalline Cu2O:Sr thin films deposited on glass substrate by metal organic-chemical vapor deposition. Their electrical properties are studied as a function of
the strontium content, as determined by wavelength dispersive X-ray spectrometry. These electrical transport measurements highlight a copper vacancy doping mechanism induced by strontium incorporation, leading to a large decrease of the resistivity as low as 1.2 Ω.cm and corresponding free carrier mobilities about 15 cm2·V−1·s−1 at room temperature. Moreover, in addition to the main copper vacancy acceptor level, found at EA1= 278±21 meV above the top of the valence band, a coexisting shallower acceptor level with an ionization energy of EA2= 133±15 meV occurs for a strontium content above 5% and is tentatively assigned to a large size impurity−vacancy complex"