SEMINAIRE LMGP - 03.05.2021 - Dr. Guy FEUILLET

Nano Pendeo Epitaxy of GaN on SOI

Dr. Guy FEUILLET
CEA- LETI
Research Director

In heteroepitaxial, layers, threading dislocations are generated not only from the lattice mismatch between the layer and substrate, but also from the crystalline misorientation between grains or crystallites upon the nucleation process. We have developed the NanoPEGS method to address that issue. The main idea is that crystallites are epitaxially grown on streatchable nanopillars, in order that they are perfectly aligned with respect to each other. We will show how this nano-compliance growth approach can be applied to the epitaxy of GaN over silicon and the numerous perspectives offered in terms of devices.