“ Defect spectroscopy on semiconductor materials and devices”
Dr Frédérique DUCROQUET
IMEP-LaHC, CNRS, Univ. Grenoble Alpes, Grenoble INP
Abstract
The electrical properties of semiconductor materials and the performance of devices are often impacted by the presence of defects. Their characterization and identification are therefore a recurring demand in the development of new technologies. Thus, in addition to the standard current-voltage and capacitance-voltage electrical characteristics several specific characterization techniques have been developed, such as admittance spectroscopy and deep level transient spectroscopy (DLTS).
From various microelectronic technologies examples (III-V optoelectronics, CMOS technologies, micro-batteries, solar cells…), we will show how these electrical analyses can be adapted to the different problems encountered such as mesh mismatch, interface states, surface defects, contamination, compensated materials, alloy disorders, band tails… We will highlight the contribution of modelling and the complementarity with structural, physico-chemical and optical characterizations. Perspectives on future applications will be discussed.
3 parvis Louis Néel - 38000 Grenoble
Accès : TRAM B arrêt Cité internationale
2nd floor - LMGP