Controlling the polarity of ZnO nanowires in addition to their structural uniformity is critical for their real-world integration into electronic, optoelectronic, and photovoltaic devices. We have recently demonstrated, by combining selective area growth using electron beam lithography with low-temperature chemical bath deposition, the fabrication of epitaxial ZnO nanowire arrays with great structural uniformity and optical quality as well as with controllable homogeneous oxygen or zinc polarity.
These open new opportunities for fabricating complex heterostructures with a wide number of potential applications.
V. Consonni, E. Sarigiannidou, E. Appert, A. Bocheux, S. Guillemin, F. Donatini, I.C. Robin, J. Kioseoglou, F. Robaut, Selective area growth of well-ordered ZnO nanowire arrays with controllable polarity, ACS Nano 8, 4761 (2014).
Collaborations CEA-LETI, Néel Institute , Aristotle University of Thessaloniki Plate-Forme Technologique Amont, CIME Nanotech and CMTC.
A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mailPartagez cet articleFacebookTwitterLinked In