Boron nitride (BN) has recently attracted considerable interest as a thin film material due to a beneficial combination of properties. This, the least investigated group 13 nitride is a promising material for electronic and optoelectronic devices in its sp2-hybridised state (sp2-BN), where it exhibits a wide band gap (~ 6 eV), low dielectric constant and possibility to be doped both p- and n-type. Moreover, BN based devices are predicted to be operational at high temperatures and in chemically demanding environments due to high thermal and chemical stability. In addition, the sp2-BN basal plane structure is similar to that of the graphene and with a lattice mismatch of only 2% to graphene. That makes sp2-BN suitable for use as a dielectric substrate for graphene. However, implementation of sp2-BN is hampered by the lack of a reliable synthesis route to prepare high quality thin films suitable for the suggested applications. During my talk I will present my recent success in depositing sp2-BN thin films on different substrates by employing chemical vapour deposition (CVD). Results from characterisation of the deposited thin films will be presented in details.
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