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Tailoring Resistive Switching in valence change memories (VCM): Understanding the phenomena driving resisitive switching in LaMnO3
Activités / CV
Raquel Rodriguez Lamas (1993) is a PhD candidate in the “Laboratoire de matériaux et génie physique” (LMGP) in Grenoble. Her work is being developed in the context of the ALPS memories (ANR) project, in collaboration with CEA Leti, UCCS Lille and IMEP-LaHC, in the field of resistive switching and under the supervision of Michel Boudard, Carmen Jiménez y Mónica Burriel.
She graduated in nanoscience and nanotechnology in UAB (Universitat Autonoma de Barcelona) in 2015. As an undergrad student she did a six month internship in the catalan institute of nanoscience and nanotechnologie (ICN2), under the supervision of José Santiso and Anna Magraso in the Thin film growth unit.
In 2016 she graduated from the Master in advanced nanoscience and nanotechnologie (UAB). During the master period she performed a second internship in ICN2 in the same division, growing perovskite thin films for resistive switching applications. She participated in a project to study the grapheme oxide integration in heterostructures for resistive switching applications through microfabrication in clean room, under the supervision of Gemma Rius.
In LMGP she is currently working on the understanding of the mechanisms implicated on resistive switching in valence change memories. More precisely on LaMnO3 based memories. From the optimization of crystalline thin film growth, the fabrication of devices and their electric characterization to the fabrication of advanced characterization compatible devices to perform operando microanalysis through techniques such as HAXPES or XANES in synchrotron facilities.