Nouvelle publication XTO par N. Tsavdaris

Le papier "Macroscopic Approach to the Nucleation and Propagation of Foreign Polytype Inclusions during Seeded Sublimation Growth of Silicon Carbide" a été publié dans Crystal Growth and Dessign

Vous trouverez ici le papier par Nikolaos Tsavdaris. Voici l'abstract:
"The nucleation and propagation of foreign polytypes during sublimation growth of SiC is addressed, using experiments and simulation. The occurrence of a foreign polytype is linked to the combined effects of (i) the presence of the natural {0001} facets and (ii) the minimization of 2D nucleation energy. Areas with a high probability of foreign polytype nucleation can thus be predicted."

DOI:10.1021/cg501095b