LMGP / Grenoble INP Minatec 3 parvis Louis Néel - Grenoble Accès : Tram B - Cité Internationale
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Dr. Konstantinos ZEKENTES Microelectronics Research Group (MRG) - Institute of Electronic Structure & Laser (IESL) Foundation for Research & Technology - Hellas (FORTH) Heraklion, Crete, Greece
Konstantinos ZEKENTES is an invited Professor from Phelma - Grenoble INP visiting LMGP and IMEP-LAHC for 3 months.
SiC nanowires : material and devices
SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. Very low diameter (<10 nm) nanowires as well as nanowires free of planar defects have not been demonstrated and these are some of the main challenges. Another issue is the high unintentional doping of the nanowires that does not allow the demonstration of high performance field effect transistors using SiC nanowires as channel material. On the other hand, the grown nanowires are suitable for field emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects will be overviewed during the presentation.
Brief CV Konstantinos Zekentes received his undergraduate degree in Physics, from the University of Crete, Greece, and his Ph.D., in Physics of Semiconductors, from the University of Montpellier, France. He is currently a Senior Researcher with the Microelectronics Research Group (MRG) of the Foundation for Research and Technology-Hellas (FORTH) in Heraklion, Crete, Greece. The objective of his work is to coordinate and supervise the MRG's effort for the development of SiC-related technology for elaborating high power/high frequency devices. His basic research interest in Molecular Beam Epitaxy is the growth of SiC nanostructures. Dr. Zekentes has more than hundred journal and conference publications and one US patent.
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