Aller au menu Aller au contenu
Synthèse et propriétés de monocristaux, de poudres, films minces ou hétérostructures

Etudes à l'interface avec la matière biologique

> LMGP_Présentation > LMGP_Actualites

LMGP Seminar : K. ZEKENTES - SiC nanowires : material & devices

Publié le 6 février 2013
A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail cet article Facebook Twitter Linked In
Conférence du 20 mars 2013 au 21 mars 2013
Wednesday at 2:00 pm - LMGP Conference room - 2nd floor
LMGP / Grenoble INP Minatec
3 parvis Louis Néel - Grenoble 
Accès : Tram B - Cité Internationale

Free entrance - No registration required  
K. Zekentes

K. Zekentes

Dr. Konstantinos ZEKENTES
Microelectronics Research Group (MRG) - Institute of Electronic Structure & Laser (IESL)
Foundation for Research & Technology - Hellas (FORTH)
Heraklion, Crete, Greece

Konstantinos ZEKENTES is an invited Professor from Phelma - Grenoble INP
visiting LMGP and IMEP-LAHC for 3 months.

SiC nanowires : material and devices


SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices.  SiC nanowires growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. Very low diameter (<10 nm) nanowires as well as nanowires free of planar defects have not been demonstrated and these are some of the main challenges. Another issue is the high unintentional doping of the nanowires that does not allow the demonstration of high performance field effect transistors using SiC nanowires as channel material. On the other hand, the grown nanowires are suitable for field emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects will be overviewed during the presentation.

Brief CV
Konstantinos Zekentes received his undergraduate degree in Physics, from the University of Crete, Greece, and his Ph.D., in Physics of Semiconductors, from the University of Montpellier, France. 
He is currently a Senior Researcher with the Microelectronics Research Group (MRG) of the Foundation for Research and Technology-Hellas (FORTH) in Heraklion, Crete, Greece. The objective of his work is to coordinate and supervise the MRG's effort for the development of SiC-related technology for elaborating high power/high frequency devices. His basic research interest in Molecular Beam Epitaxy is the growth of SiC nanostructures. Dr. Zekentes has more than hundred journal and conference publications and one US patent.  

A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail cet article Facebook Twitter Linked In

mise à jour le 15 mars 2013

  • Tutelle CNRS
  • Tutelle Grenoble INP
Université Grenoble Alpes